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Boron phosphorus and arsenic diffusion in MOS transistors: Simulation and analysis in 2D and 3D by N. Guenifi & R. Mahamdi & I. Rahmani

Author:N. Guenifi & R. Mahamdi & I. Rahmani , Date: January 29, 2023 ,Views: 4

Boron phosphorus and arsenic diffusion in MOS transistors: Simulation and analysis in 2D and 3D by N. Guenifi & R. Mahamdi & I. Rahmani

Author:N. Guenifi & R. Mahamdi & I. Rahmani
Format: pdf
Tags: Diffusion, Polysilicon, Bore, Phosphorus, Arsenic, solubility, Silvaco TCAD
Publisher: Taylor & Francis
Published: 2018-01-31T09:01:42+00:00


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Boron phosphorus and arsenic diffusion in MOS transistors: Simulation and analysis in 2D and 3D by N. Guenifi & R. Mahamdi & I. Rahmani.pdf


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